Dublin Core
Title
The Effect of Ge Content on the Optical and Electrical Properties of A-Sige: H Thin Films
Description
The effect of Ge content on the optical and electrical properties of a-SiGe:H thin films deposited by HWC-PECVD had been investigated. The a-SiGe:H films ware grown on corning glass 7059 substrate using 10% diluted mixture of GeH4 and SiH4 gases, respectively. The GeH4 gas flow rate was varied from 2.5 – 12.5 sccm, while the flow rate of SiH4 was kept constant at 70 sccm. The results showed that the deposition rate of a-SiGe:H thin films increased by increasing of GeH4 gas flow rate. In addition, the Ge content in the film increased and the optical band gap decreased. The dark conductivity of a-SiGe:H films were relatively constant, whereas the photo conductivity decreased with increasing of Ge content.
Creator
Mursal, Mursal
Irhamni, Irhamni
Winata, T
Source
Jurnal Natural; Volume 14, Number 1, Year 2014
Publisher
Jurnal Natural
Date
2014-07-02
Type
info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
Peer-reviewed Article
Identifier
http://jurnal.unsyiah.ac.id/natural/article/view/1518